METHOD OF MEASURING COMPONENT OF THERMAL RESISTANCE OF POWERFUL SEMICONDUCTOR INSTRUMENTS Russian patent published in 2018 - IPC G01R31/26 

FIELD: electricity; measurement technology.

SUBSTANCE: invention relates to technique for measuring thermophysical parameters of semiconductor devices and can be used to monitor their quality. For this, method consists in passing through powerful semiconductor device a sequence of N pulses of heating current of given amplitude I_gr, duration of which is increased by logarithmic law. For each i-th current pulse, based on the measurement of temperature-sensitive parameter U_TSP determine temperatures of p-n slope T_j(t_i) and T_j(t_i+1) before and after formation of i-th current pulse, respectively, and also measure voltage drop U_gr on the object while passing current pulse through it. Then, cumulative structure function C_TΣ(R_TΣ) is calculated by the formulas: . After this, by differentiating cumulative structure function C_TΣ(R_TΣ) reveal areas of its sharp growth and determine components of thermal resistance of high-power semiconductor devices.

EFFECT: increased accuracy.

1 cl, 4 dwg