PHOTO RESISTIVE FILM FROM SOLUTION ON SUBSTRATE SURFACE FORMATION METHOD USING SOLVENTS WITH HIGH BOILING POINT Russian patent published in 2019 - IPC H01L21/312 

Abstract RU 2688495 C1

FIELD: technological processes.

SUBSTANCE: use for the photoresist films formation. Essence of the invention consists in the fact, that the photoresistive film with a thickness of 0.8 to 20 mcm from a solution on the substrate surface formation method includes the photoresistive material from the solution application by the aerosol and spraying in the gas flow method, enabling the formed photoresist film drying due to the solvent evaporation increased rate, on the substrate in the form of individual microdroplets that do not form the continuous layer in the separate iteration, at that, the substrate may contain elements with the level difference exceeding the photoresistive film thickness, at that, for the photoresistive material solution preparation using the solvent having a boiling point in the range from 180 to 215 °C, which is one of the solvents or their mixture, cyclohexanemethanol, 2-cyclohexylethanol, in a volume ratio from at least 2:1 to 5:1 to the formed photoresistive film material main components.

EFFECT: enabling the possibility of the photoresistive material main components redistribution reduction.

1 cl, 2 dwg

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RU 2 688 495 C1

Authors

Levin Denis Dmitrievich

Romashkin Aleksej Valentinovich

Dates

2019-05-21Published

2017-12-08Filed