METHOD FOR PRODUCING PHOTORESIST FILM FROM SOLUTION AT SUBSTRATE SURFACE Russian patent published in 2018 - IPC H01L21/312 G03F7/26 

FIELD: technological processes; photography.

SUBSTANCE: invention can be used to form photoresist films that are uniform in thickness and suitable for performing photolithography operations for the formation of integrated microcircuits, MEMS and UHF structures on substrates, including with a complex relief, where the difference in height is much larger than the thickness of the photoresist film being formed. Method is proposed for producing a photoresist film from a solution by aerosol iterative spraying in a gas stream, simultaneously with the formation of a photoresist film, the solvent evaporates from the volume of microdroplets, realized by combining heating and forming a gas stream above the surface of the film, the flow rate of which is in the range of 3 to 4 orders of magnitude with respect to the flow rate of the solution, wherein the preparation of the photoresist material solution is carried out by adding a solvent to the initial solution of the photoresist having a boiling point in the range of 160 °C to 175 °C, which is one of the solvents or a mixture thereof – 3-cyclohexene-1-carboxaldehyde, hexahydrobenzaldehyde, 3-methyl-3-cyclohexene-1-one.

EFFECT: invention provides for a reduction in the redistribution of the main components of the photoresist material in the photoresist layer that is formed, which contribute to an increase in the thickness heterogeneity, an increase in the roughness of the film during the evaporation of solvents on substrates containing complex relief and the difference in the properties of materials of structural elements.

1 cl, 4 dwg