FIELD: electronic engineering. SUBSTANCE: lithographic process for producing semiconductor devices, integrated circuits, and printed-circuit boards involves generation of photoresist mask including substrate coating with positive naphthoquinone diazide base photoresist layer, its drying, exposure, development, treatment with inorganic liquid, and hardening; liquid nitrogen is used as inorganic liquid and hardening is made in two steps with liquid nitrogen treatment in-between; first hardening step takes 0.25-0.35 of total hardening period. EFFECT: enhanced density of photoresist film material and consequently enhanced yield. 1 tbl
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