METHOD OF MODIFYING NANOSTRUCTURES OF ELECTRONIC ENGINEERING MATERIALS WITH GAS CLUSTER IONS Russian patent published in 2019 - IPC H01L21/302 B82B3/00 

Abstract RU 2688865 C2

FIELD: chemistry.

SUBSTANCE: invention can be used for modification of nanostructures of materials. Essence of the invention is that a method of modifying nanostructures of electronic materials of gas cluster ions, involving removal of any undesirable ionizing radiation from the beam of cluster ions, wherein said gas cluster ion beam is supplied in pulsed mode.

EFFECT: technical result is possibility of increasing efficiency of gas cluster ion beam accelerator.

1 cl, 1 tbl

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RU 2 688 865 C2

Authors

Irzhak Dmitrij Vadimovich

Chernysh Vladimir Savelevich

Vyatkin Anatolij Fedorovich

Dates

2019-05-22Published

2016-11-02Filed