FIELD: chemistry.
SUBSTANCE: invention can be used for planarising nanostructure surfaces of materials. Essence of the invention lies in the fact that the method of planarising the surface of nanostructures of electronic materials is carried out with a cluster of gas cluster ions, and working gas of cluster gas ion beam is xenon.
EFFECT: technical result is enabling reduction of surface roughness by approximately 2 times.
1 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MODIFYING NANOSTRUCTURES OF ELECTRONIC ENGINEERING MATERIALS WITH GAS CLUSTER IONS | 2016 |
|
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| DRUG DELIVERY SYSTEM AND METHOD OF ITS MANUFACTURE | 2012 |
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| METHOD FOR FINISHING PLANARIZATION OF THE SURFACE OF AN OPTICAL GLASS CERAMICS | 2016 |
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| METHOD OF GAS SUPPLY TO SUPERSONIC NOZZLE OF GAS CLUSTER ION ACCELERATOR | 2017 |
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| DEVICE FOR FORMING A BEAM OF CLUSTER OR ATOMIC IONS OF GAS | 2022 |
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RU2796652C1 |
| METHOD FOR PULSE ELECTRON-ION-PLASMA HARDENING OF HARD-ALLOY TOOL OR ITEM | 2014 |
|
RU2584366C1 |
| METHOD AND APPARATUS FOR NEUTRAL BEAM PROCESSING BASED ON GAS CLUSTER ION BEAM TECHNOLOGY | 2011 |
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| POLARISER BASED ON ARRAY OF NANOCONDUCTORS | 2006 |
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| PLANT FOR DOUBLE-SIDED FINISHING SURFACE OF INTRAOCULAR LENSES | 2014 |
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RU2585010C1 |
