METHOD OF MAKING PHOTODETECTOR MULTIELEMENT MATRICES Russian patent published in 2019 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: invention relates to production of multielement matrices of photodetectors on a plate with thin functional layers and can be used to create matrix photodetectors for different purposes. In the disclosed method of producing multielement matrices of photodetectors on a plate with thin functional layers differing in chemical composition and forming a p-n junction over the entire area of the plate on an absorbent layer of a homogeneous semiconductor material which provides photoelectric conversion of radiation in a given wavelength range, end of liquid etching process at sufficient depth of gaps creating boundaries of separate elements (photodiodes) with homogeneous parameters of photodiodes on plate, is determined from the determined value of the photocurrent of separate test photodiodes located in the centre and on the edges of the plate and illuminated by the set radiation flux corresponding to the spectral range of sensitivity of the absorbing layer from the homogeneous semiconductor material.

EFFECT: object of the invention is to develop a method for precision liquid etching of heteroepitaxial structure layers of different chemical composition, for example, In_0,53Ga_0,47As-Al_0,48In_0,52As, at an indefinite depth, providing separation of a photosensitive structure of large area into separate photodiodes with homogeneous parameters, which make up an array of elements of the selected matrix format, which fit on the plate.

1 cl, 1 tbl, 3 dwg