METHOD OF MANUFACTURING PLATED-THROUGH MICROHOLES IN SILICON SUBSTRATE Russian patent published in 2017 - IPC H01L21/768 

FIELD: physics.

SUBSTANCE: method of manufacturing plated-through microholes in a silicon substrate includes forming a polyimide coating from a solution of a polyamide acid based on a dianhydride and an oxydianiline in a polar solvent of at least 2 mcm thickness, followed by drying at a temperature of 80-120°C thermoimidization at a temperature of at least 350°C for at least 30 minutes, carrying out "dry" etching through an aluminium mask with a thickness of at least 1 mcm in two stages successively by reactive ion etching and in the "Bosch" process intil the formation of a positive etching wedge at the interface "silicon substrate-polyimide coating" with depth of at least 1 mcm, the removal of the mask and the "stop layer" is carried out in a single cycle in an alkaline etchant of polyimide.

EFFECT: increased manufacturability and reproducibility in the manufacture of plated-through microholes in a silicon substrate.

5 cl, 3 dwg