FIELD: electrical engineering.
SUBSTANCE: invention refers to the field of microelectronics.
EFFECT: technical result of the claimed invention is the creation of a radiation-resistant library of elements on complementary metal-oxide-semiconductor (CMOS) transistors with a smaller area of elements on a chip vertically proportional to the step of the topological grid, increased speed and increased yield of on-chip elements due to the arrangement of p+ protection along the outer boundary of the n-type sewers / sources of transistors with different potentials, while filling p+ with protection of the entire free substrate area, as well as by connecting polysiliated gates of transistors.
1 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| RADIATION-RESISTANT MEMORY ELEMENT FOR STATIC RANDOM-ACCESS MEMORY DEVICES ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS | 2018 |
|
RU2692307C1 |
| RADIATION-RESISTANT ELEMENT OF MEMORY FOR STATIC OPERATIONAL MEMORIZING DEVICES ON COMPLIMENTARY METAL-OXIDE-SEMI-CONDUCTOR OF TRANSISTORS | 2018 |
|
RU2674935C1 |
| RADIATION-RESISTANT COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR BASED ELEMENT LIBRARY | 2013 |
|
RU2539869C1 |
| SYMMETRICAL MULTIPLEXER ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (COMS) TRANSISTORS | 2018 |
|
RU2689820C1 |
| RADIATION-RESISTANT LSIC MANUFACTURING METHOD | 2010 |
|
RU2434312C1 |
| BICMOS DEVICE AND PROCESS OF ITS MANUFACTURE | 1996 |
|
RU2106719C1 |
| METHOD FOR GENERATION OF CMOS-STRUCTURES WITH POLYSILICIC GATE | 1992 |
|
RU2056673C1 |
| DEVICE FOR PROTECTION AGAINST STATIC ELECTRICITY DISCHARGES OF POWER LEADS OF COMPLEMENTARY MOS (METAL-OXIDE-SEMICONDUCTOR) INTEGRATED CIRCUITS ON SILICON WAFERS WITH N-TYPE CONDUCTIVITY | 2013 |
|
RU2585882C2 |
| PROCESS OF MANUFACTURE OF BICOS/BIMOS DEVICE | 1998 |
|
RU2141148C1 |
| PROCESS OF FORMATION OF CMOS STRUCTURES WITH POLYSILICON GATE | 1992 |
|
RU2038647C1 |
