METHOD FOR MANUFACTURE OF SEMICONDUCTOR INSTRUMENT Russian patent published in 2009 - IPC H01L21/205 

FIELD: physics, semiconductors.

SUBSTANCE: application: in technology of semiconductor instruments production. In process of semiconductor elements production substrates are annealed in hydrogen at the temperature of 980-1150°C for 60 seconds, then on insulating substrate with the rate of 5.3-6 mcm/min, silicon film is formed at the temperature of 945±15°C by pyrolytic decomposition of monosilane dissolved with hydrogen down to 4-5%.

EFFECT: reduced density of defects that provides for manufacturability, improvement of parametres, increased reliability and percentage of yield output.

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