ASYNCHRONOUS LOGIC ELEMENT OF A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR STRUCTURE Russian patent published in 2019 - IPC H03K19/02 H03K19/948 H01L29/808 

FIELD: computer equipment.

SUBSTANCE: invention relates to computer engineering. Technical result is achieved by an asynchronous logic element of a complementary metal-oxide-semiconductor structure consisting of two inverters with a third state, a chip of an integrated microcircuit chip, first and second inverters input, first and second input buses, flip-flop consisting of two groups of transistors, which include four complementary pairs PMOS and NMOS transistors, two additional PMOS transistors in the first group of flip flops transistors, two additional NMOS transistors in second group of flip-flop transistors, gate PMOS of transistor in first pair PMOS and NMOS transistors in first group of flip-flop transistors, drain NMOS transistor of first pair of transistors, gate NMOS transistor second pair PMOS and NMOS first group transistors, drain PMOS transistor of the fourth pair of transistors.

EFFECT: technical result consists in improvement of noise immunity of logic element under action of single nuclear particles.

4 cl, 3 dwg, 2 tbl