MEMORY CELL FOR COMPLEMENTARY MICROCIRCUIT OF METAL-OXIDE-SEMICONDUCTOR STRUCTURE Russian patent published in 2015 - IPC G11C11/40 

FIELD: electricity.

SUBSTANCE: memory cell for complementary microcircuit of metal-oxide-semiconductor structure consists of pairs of interconnected NMOS and PMOS transistors, with power supply bus and selection lines and data lines placed at the integrated circuit crystal. Transistors are united into two pairs, each of them containing one pair of NMOS and PMOS transistors with jointed drains, one NMOS transistor and one PMOS transistor interconnected by their gates with jointed drains of this pair. These two groups of transistors are placed at the integrated circuit crystal at distance from each other, which is equal or more than threshold distance in order to exclude simultaneous impact of single nuclear particle to both groups of transistors with level bigger than the threshold value.

EFFECT: improving failure resistance to impact of single nuclear particles without excess increase in square area occupied by one memory cell at crystal included into composition of integral CMOS random access memory.

2 cl, 3 dwg, 2 tbl