FIELD: technological processes.
SUBSTANCE: invention relates to a method for physical deposition from a gas phase obtained by electron-beam evaporation, a thin film consisting of silver crystallites, and can be used for production of devices requiring high-quality thin films of metals, in spheres of microelectronics, photonics, nano-plasmonics and quantum computing devices. Substrate working surface is prepared, the substrate is degassed in a vacuum and said physical deposition of the thin film from silver crystallites onto the working surface of the substrate. Said physical deposition of a thin film of silver crystallites is carried out at temperature T1, which is in range of 4–250 K, then holding substrate in vacuum for period of time tH in range of 2–24 hours at heating from temperature T1 physical deposition of said thin film to temperature T2, equal to room temperature.
EFFECT: higher aspect ratio of lateral sizes of thin film from silver crystallites to its thickness.
13 cl, 11 dwg, 2 ex
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Authors
Dates
2019-08-13—Published
2019-04-02—Filed