METHOD OF ADJUSTING EPITAXIAL GROWTH IN A VACUUM OF DOPED SILICON LAYERS AND A RESISTIVE EVAPORATION UNIT FOR ITS IMPLEMENTATION Russian patent published in 2019 - IPC H01L21/203 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor structures for electronic equipment and can be used for control of doping degree in epitaxial growth in vacuum of doped silicon layers. In the method of controlling the degree of doping in the epitaxial growth in vacuum of doped silicon layers by controlling the pressure of the vapor stream supplied to the substrate from the heated resistive sources of silicon vapor and the vapor source of the alloying element as a result of changing their temperature, said temperature change of said vapor sources is carried out at invariable but different degrees of their resistive heating by movement of a heat shield located between them, leading to change in the cross-section area of the heat radiation flux between them. At that, in the evaporation resistive unit containing the resistors of the silicon vapor source and the alloying element vapor source installed in the vacuum chamber, installed so that the vapor flow from them can be directed to the substrate, as well as heat shield arranged between them, the latter is installed with possibility of movement between the mentioned vapor sources, leading to change of cross-section area of radiative heat flux between them, which is caused by difference in degrees of their invariable resistive heating, and the vacuum chamber is equipped with means of initial limitation of passage of the specified radiating heat flow in its cross section with giving to the latter the form ensuring standardization of the specified change of the area of this cross-section.

EFFECT: high technological effectiveness of controlling the degree of alloying during epitaxial growth in vacuum of doped silicon layers.

5 cl, 2 dwg