SUBLIMATE SOURCE OF EVAPORATED MATERIAL FOR MOLECULAR BEAM EPITAXY INSTALLATION Russian patent published in 2012 - IPC H01L21/205 

Abstract RU 2449411 C1

FIELD: electricity.

SUBSTANCE: sublimate source of evaporated material for molecular beam epitaxy installation includes evaporated material carrier fixed on current leads where end of each current lead contains plate in which hole is made and carrier is made as bar with tapered ends and installed with its tapered ends in the holes made in plates.

EFFECT: simplification of manufacturing and lowering material consumption for manufacturing evaporated element with increase in its dimensions and providing high purity and high density of crated flow of evaporated material, as well as prevention of destruction and providing simplicity of evaporated element replacement.

2 cl, 2 dwg

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RU 2 449 411 C1

Authors

Shengurov Vladimir Gennad'Evich

Svetlov Sergej Petrovich

Chalkov Vadim Jur'Evich

Denisov Sergej Aleksandrovich

Shengurov Dmitrij Vladimirovich

Dates

2012-04-27Published

2011-01-13Filed