METHOD OF MAKING SEMICONDUCTOR STRUCTURE BY MOLECULAR BEAM EPITAXY AND APPARATUS FOR SUBLIMATION MOLECULAR BEAM EPITAXY Russian patent published in 2013 - IPC H01L21/205 

FIELD: physics.

SUBSTANCE: method and apparatus are based on resistive evaporation of sprayed materials. The doped layer of the semiconductor structure is formed by simultaneous evaporation of the basic undoped material and the basic material which is doped by an dopant. To improve the quality of the structure, when forming the doped layer of the semiconductor structure, constant flux density of the basic material is maintained by selecting electric current which is passed through the source of basic undoped material and electric current which is passed through the source of basic material doped with a dopant. The apparatus for molecular beam epitaxy has in a growth chamber, at least two resistive sources of sprayed material which are connected to corresponding power supply units, which are controlled and are connected to a programming device, one source being made from basic undoped material and the other from basic material doped with a dopant.

EFFECT: high quality of semiconductor structures and broader functional capabilities of the method and apparatus by enabling obtaining of multilayered structures with a wide range of concentrations of dopants at relatively low growth temperatures.

9 cl, 4 dwg