FIELD: chemistry.
SUBSTANCE: in the method of making a silicon structure on an insulator by joining two silicon wafers, one of which has an insulating layer on the working surface, the insulating layer on the working surface of the first wafer has an etched out contour on its edge, and a layer of material is deposited on the edge of the working surface of the second wafer, where the said layer has the same shape and size of the etched out region on the firs wafer and enables to attach the wafers together when they are brought into contact during thermal treatment.
EFFECT: less defects and high quality of silicon films on an insulator owing to preservation of quality of the starting material.
7 dwg
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