METHOD OF SPLICING DIELECTRIC PLATES UNDER ACTION OF STRONG ELECTRIC FIELD Russian patent published in 2019 - IPC H01L25/16 

FIELD: manufacturing technology.

SUBSTANCE: invention can be used for making multilayer dielectric or semiconductor substrates coated with a dielectric layer. Essence of the invention is that the method of splicing dielectric plates under the action of a strong electric field involves depositing an intermediate metal layer on the face side of one of the dielectric plates, forming a pattern in that layer, alignment of plates faced to each other and placed in a vacuum chamber between two electrodes, pumping chamber to vacuum level of 10^-3 Pa up to 10^-5 Pa, plates heating to temperature from 200 °C to 300 °C, compression of electrodes with pressure from 3⋅10³ Pa up to 8⋅10³ Pa and connection of electrodes to high voltage source, providing electric field intensity from 5⋅10⁴ V/cm to 8⋅10⁴ V/cm for from 150 minutes to 200 minutes with change of voltage polarity every 20–30 minutes.

EFFECT: possibility of obtaining conductive connecting layers between dielectric substrates with possibility of their application on a template or on the whole area of substrate simultaneously, where strength of connection is provided by diffusion of connecting layer into substrates, by group method.

1 cl, 1 dwg, 1 tbl