STRUCTURE SILICON-ON-INSULATOR FOR SUPERLARGE-SCALE INTEGRATED CIRCUIT Russian patent published in 2004 - IPC

FIELD: formation of both field-effect and bipolar transistors on single crystal in process of fabrication of superlarge-scale integrated circuits. SUBSTANCE: structure silicon-on-insulator for superlarge-scale integrated circuit incorporates regions of silicon insulated one from another by first layer of dielectric and from silicon substrate by second layer of dielectric to position field-effect and bipolar transistors. Structure contains above second layer of dielectric layers of first metallide emerging in process of splicing of plates and second metallide demonstrating properties of barrier for first metallide and silicon utilized in the capacity of latent low-resistance layer in substrate of field-effect and in collector of bipolar transistors. Layer of second metallide displays properties of barrier not only for layers of first metallide and silicon but for elements impairing properties of regions of silicon and parameters of field-effect and bipolar transistors made in them. EFFECT: presence in structure of effective barrier between layer of first metallide and instrument silicon layer both for atoms of first metallide and silicon and for impurities impairing properties of silicon layer and parameters of transistors in instrument layer. 8 cl, 5 dwg