BUFFER AMPLIFIER BASED ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION FOR OPERATION AT LOW TEMPERATURES Russian patent published in 2020 - IPC H03F3/26 

Abstract RU 2710923 C1

FIELD: physics.

SUBSTANCE: invention relates to analogue microelectronics. Amplifier includes power supply, field transistors, additional resistor. Claimed CU allows parametric optimization of parameters, for example, by criterion of zero offset voltage minimization, which in real circuits is provided by optimum selection of resistances of the first and second additional resistors, as well as the length and width of the channel of the first and second output field-effect transistors.

EFFECT: technical result consists in creation of radiation-resistant and low-temperature circuit solution CU on complementary field transistors, which provides high stability of static mode of transistors and low noise level, including during operation in low temperature range.

1 cl, 7 dwg

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RU 2 710 923 C1

Authors

Prokopenko Nikolaj Nikolaevich

Drozdov Dmitrij Gennadevich

Bugakova Anna Vitalevna

Dates

2020-01-14Published

2019-06-19Filed