FIELD: analogue microelectronics.
SUBSTANCE: invention relates to analogue microelectronics and can be used as two-stroke buffer amplifiers. Buffer amplifier comprises input field transistors, power supply buses, current-stabilizing resistor, additional field-effect transistors, additional current-stabilizing resistor.
EFFECT: technical result consists in creation of radiation-resistant and low-temperature design BA on complementary field-effect transistors with control p-n junction, providing the possibility of circuit adjustment of systematic component of BA zero shift voltage and through current of the first and second output field transistors in conditions of spreading of transfer characteristics of used field transistors.
1 cl, 10 dwg
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