WHITE GLOW LED AND LED HETEROSTRUCTURE BUILT AROUND SOLID-STATE SOLID GaPAsN SOLUTIONS OF GaP AND Si SUBSTRATES Russian patent published in 2015 - IPC H01L33/32 

FIELD: physics, optics.

SUBSTANCE: white glow LED comprises n-type semiconductor ply composed of semiconductor solid solution GaP_1-x-yAs_xN_y (0.3>x>0, 0.030>y>0.004), heterostructure with inherent conductivity type composed by semiconductor solid solutions GaP_1-x-yAs_xN_y (0.3>x>0, 0.030>y>0.004) composed above ply of n-type semiconductor, ply of semiconductor GaP_1-x-yAs_xN_y (0.3>x>0, 0.030>y>0.004) of p-type composed on heterostructure GaP_1-x-yAs_xN_y (0.3>x>0, 0.030>y>0.004) with inherent conductivity type and final thin metamorphic ply of semiconductor InGaAs of p-type. Note here that molar portions of nitrogen, y, and arsenic, x, either simultaneously abruptly vary or individually in the range of 0.3>x>0 and 0.030>y>0.004 to form graded band-gap semiconductor material. Invention covers also the heterostructure emitting white light.

EFFECT: higher efficiency of the use of p-n-junctions, LEDs with increased light flux and power.

15 cl, 4 dwg