LIGHT-EMITTING SEMICONDUCTOR DEVICES WITH A GETTER LAYER Russian patent published in 2018 - IPC H01S5/183 H01S5/323 H01L33/30 

FIELD: electricity.

SUBSTANCE: invention relates to light-emitting semiconductor device (100) comprising substrate (120), light-emitting layer structure (155), and AlGaAs getter layer (190) to reduce an impurity content in light-emitting layer structure (155), light-emitting layer structure (155) comprises active layer (140) and layers with different aluminum content, the growth conditions of the layers of light-emitting layer structure (155) containing aluminum are different in comparison to the growth conditions of AlGaAs getter layer (190). AlGaAs getter layer (190) comprises a sublayer in which the aluminum content varies with less than 0.5 % / nm between a first aluminum content and a second aluminum content different from the first aluminum content. Getter layer (190) helps to reduce the concentration of impurities, such as sulfur, et cetera, in a gas phase of a deposited equipment or growth reactor.

EFFECT: decrease in the content of such impurities reduces the probability of introducing impurities into light-emitting layer structure (155), that can adversely affect the life of light-emitting semiconductor device (100).

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