MICROWAVE SWITCHING BOARD FROM HIGH-RESISTANCE SILICON ON A METAL BASE Russian patent published in 2020 - IPC H05K1/00 

FIELD: electrical engineering.

SUBSTANCE: present invention relates to the design of a microwave switching board made from high-resistance silicon on a metal base. On the front side of the silicon board there are at least two cavities-wells of different depth, on the front side there are strips of microstrip transmission lines made of metal with low electrical resistance of different thickness, on the reverse side of the silicon board there formed are air slots of different depth, which run parallel to the strips.

EFFECT: reduced ohmic losses when propagating UHF energy, enabling variation over a wider range of combined relative permittivity of the microstrip transmission line, eliminating overheating of UHF crystals and transmission lines formed on the board, ensuring preservation of structural strength of the silicon plate and possibility of making a circuit board using a group method.

1 cl, 4 dwg