HIGH-POWER MICROWAVE METAL-INSULATOR- SEMICONDUCTOR TRANSISTOR Russian patent published in 2002 - IPC

FIELD: semiconductor engineering; power generating and amplifying in high- and superhigh-frequency band. SUBSTANCE: transistor has semiconductor substrate covered with high-resistant and highly doped layers of first polarity of conductivity, elementary transistor cells with source region of second polarity of conductivity, drain region of second polarity of conductivity, channel region of first polarity of conductivity within high-resistance layer of substrate, and metal drain, source, and gate electrodes on its front surface, V-section grooves in high-resistance layer of substrate, metal buses interconnecting source electrodes of transistor cells and highly doped substrate layer through grooves, and common metal source electrode on rear end of highly doped substrate layer; novelty is that grooves are formed directly in current regions of transistor cells and their side walls are tilted to front surface of high-resistance substrate layer through 50-70 deg. in upper part of substrate high-resistance layer and through 90 deg., in its lower part, tilted and vertical side walls of grooves being integrated in plane spaced from front surface of substrate high- resistance layer through distance of 0.5-0.7 of this layer thickness. Additional highly doped regions of first polarity of conductivity are formed in high-resistance layer of substrate along vertical side walls of channels. EFFECT: improved frequency and power characteristics of transistors. 2 cl, 2 dwg, 3 tbl