ELECTRODE STRUCTURE OF REAR ELECTRODE OF SEMICONDUCTOR SUBSTRATE, METHOD OF ITS OBTAINING AND SPUTTERED TARGET FOR USE IN PRODUCTION OF ELECTRODE STRUCTURE Russian patent published in 2020 - IPC H01L21/285 

FIELD: electrical engineering.

SUBSTANCE: invention relates to an electrode structure of a back electrode, a method of obtaining an electrode structure of a back electrode and a sputtering target for formation of a layer of Ag alloy for use in a method of obtaining an electrode structure of a back electrode. Electrode structure of rear electrode formed on rear surface of semiconductor substrate and having multilayer structure includes metal layers, layered in following order: Ti layer, Ni layer and Ag layer of alloy, where the Ag alloy layer includes an Ag alloy and an additional metal M selected from Sn, Sb and Pd, the electrode rear electrode structure is configured such that when the back electrode is subjected to element analysis using an X-ray photoelectronic spectrometer in the depth direction from the Ag layer of the alloy to the Ni layer , intermediate region is observed at the boundary between Ni layer and Ag alloy layer, where spectra obtained from all metals can be detected, i.e. Ni, Ag and additional element M, and when the content of each metal in the intermediate region is recalculated, based on spectra obtained from all metals, etc. Ni, Ag and additional element M, maximum content of additional element M is 5 at. % or more.

EFFECT: invention enables to obtain an electrode structure of a back electrode which is resistant to a breakdown of the electrode and which is formed near the Ni layer.

9 cl, 3 dwg, 3 tbl