METHOD OF SELF-ORGANISING ENDOTAXY OF MONO 3C-SiC ON Si SUBSTRATE Russian patent published in 2009 - IPC H01L21/205 

FIELD: instrument making.

SUBSTANCE: invention is related to the field of semiconductor instrument making and may be used mostly for making of high-temperature detectors of physical values. In method of self-organising endotaxy of mono 3C-SiC on siliceous substrate, carbide siliceous single-crystal film of cubic modification is produced, which is coupled to single-crystal substrate of silicon of the same crystallographic orientation by method including operation of film formation by atoms of crystal lattice of substrate at temperature maintained by HF-radiation in the range from 1360 to 1380°C in flow of oxygen at normal pressure, gas flow of hydrogen by flow of 0.3 - 0.5 l/min is supplied to container section with temperature of 1000-1200°C, and then in serially installed sections with temperature of 1360-1380°C, besides gradient of temperatures in this zone is 3-5 degrees, substrates of silicon are located in sections of polycrystalline silicon carbide, and section in low temperature zone is made of graphite coated with polycrystalline silicon carbide, gradient of temperature in container is created by thermal screens.

EFFECT: invention provides for use of resource- and power-saving technology in growing of heterostructures 3C-SiC/Si.

3 cl, 1 dwg