LOW-TEMPERATURE AND RADIATION-STABLE VOLTAGE FOLLOWER ON COMPLEMENTARY FIELD TRANSISTORS WITH CONTROL P-N JUNCTION FOR TASKS OF DESIGNING ACTIVE RC-FILTERS Russian patent published in 2020 - IPC H03F3/26 

FIELD: analogue microelectronics.

SUBSTANCE: disclosed is a low-temperature and radiation-stable voltage repeater on complementary field-effect transistors with a p-n junction control for designing active RC filters, in comparison with the prototype, the gate of first (3) input field-effect transistor is connected to device input (1), source of second (5) input field transistor is connected to gate of first (7) output field transistor and connected to source of first (7) output field transistor through first (9) current-stabilizing resistor, source of first (3) input field-effect transistor is connected to the gate of second (8) output field-effect transistor and is connected to the source of second (8) output field-effect transistor through second (10) current-stabilizing resistor.

EFFECT: design of a simple radiation-stable and low-temperature circuit solution of a voltage follower on complementary field-effect transistors, which provides high stability of static mode of transistors and low noise level, including during operation in the low temperature range and technological spreads of parameters of elements.

1 cl, 12 dwg