HOUSING OF SEMICONDUCTOR DEVICE FROM METAL MATRIX COMPOSITE AND METHOD OF ITS MANUFACTURING Russian patent published in 2020 - IPC H01L23/36 

FIELD: electrical engineering.

SUBSTANCE: invention relates to design of semiconductor devices. Semiconductor device composite housing consists of metal, for example, aluminum, with concentration in total weight in mixture from 15 to 60 % and particles of silicon carbide powder, wherein silicon carbide particles in a mixture of two types: with size of 70 to 200 mcm and size of 20 to 40 mcm, in ratio of 3:1, where 3 parts of particles are particles with size of 70 to 200 mcm and 1 part of particles – with size of 20 up to 40 mcm, and housing material has similar, with substrate of microwave transistor based on silicon carbide, coefficient of thermal expansion. Also disclosed is a method of making a composite housing of a semiconductor device.

EFFECT: technical result of the invention consists in optimization of the body manufacturing technology with metallisation of the metal matrix composite, which enables to avoid surface rareness, as well as obtaining a strong junction in places of mounting the crystal on the surface of the housing, intensifying heat removal of the housing and, as a result, reducing deformation during heating of the semiconductor device during operation.

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