METHOD FOR FORMING THROUGH METALLIZED HOLES IN A SILICON CARBIDE SUBSTRATE Russian patent published in 2023 - IPC C23C26/00 H01L21/27 

FIELD: solid-state microwave microelectronics.

SUBSTANCE: invention relates to the field of solid-state microwave microelectronics and can be used to create transistors and microwave monolithic integrated circuits on silicon carbide substrates. The method for forming through metallized holes in a silicon carbide substrate includes the following operations. Mounting on a carrier of a heteroepitaxial structure formed on a silicon carbide substrate using a fixing material. Thinning of the silicon carbide substrate using any combination of grinding and polishing technological operations to the required thickness. Formation of a mask with blank windows on the surface of the reverse side of the silicon carbide substrate to perform plasma-chemical etching of through holes in the silicon carbide substrate. Removal of the mask and metallization of the reverse side of the silicon carbide substrate. On the surface of the reverse side of the silicon carbide substrate, a multilayer mask is formed, consisting of a nickel film coated with an organic resistive material.

EFFECT: reduction of labor intensity and improvement of the quality of the technological process of etching through holes in the silicon carbide substrate, increase in the percentage of yield of good products, ensuring the compatibility of the process with the standard technology for manufacturing monolithic integrated circuits for operation at microwave frequencies, increasing the manufacturability, repeatability and reproducibility of the process.

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