TEST UNIT OF RING GENERATORS ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS Russian patent published in 2020 - IPC H03K5/22 

Abstract RU 2725333 C1

FIELD: microelectronics.

SUBSTANCE: invention refers to the field of microelectronics. Technical result is achieved due to availability of two ring generators containing tested logic elements, as well as presence of two-input AND element and exclusive OR element (comparison circuit), inputs of which are connected to outputs of ring generators.

EFFECT: technical result is creation of test unit of ring generators on complementary metal-oxide-semiconductor transistors with increased universality due to possibility of testing radiation resistance of logic elements under action of separate nuclear particles.

1 cl, 2 dwg

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RU 2 725 333 C1

Authors

Gerasimov Yurij Mikhajlovich

Grigorev Nikolaj Gennadevich

Kobylyatskij Andrej Vadimovich

Petrichkovich Yaroslav Yaroslavovich

Sergeev Dmitrij Kirillovich

Dates

2020-07-02Published

2019-09-23Filed