FIELD: microelectronics.
SUBSTANCE: invention relates to the field of microelectronics.
EFFECT: creation of a voltage-controlled block of ring generators on complementary metal-oxide-semiconductor (CMOS) transistors with increased radiation resistance when exposed to individual nuclear particles (INP) and increased fault tolerance when exposed to electrical noise in the power buses due to the presence of at least three single generators, inputs controls and outputs of which are combined and are, respectively, a common control input and output of the block of ring generators.
1 cl, 4 dwg
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