METHOD FOR CREATING MOS STRUCTURES Russian patent published in 2023 - IPC H01L21/82 

FIELD: semiconductor devices production.

SUBSTANCE: scope of the proposed invention is the production of semiconductor devices and integrated circuits, namely the production of radiation-resistant MOS structures. The effect is achieved by the fact that, in contrast to the method for creating MOS structures, including the formation of gate silicon oxide and a polysilicon gate on a substrate of the first type of conductivity, a drain and source of a second type of conductivity, and silicon oxide masking them, in the proposed method, a shielding oxide layer is additionally formed silicon in places of formation of polysilicon gates, on which a layer of masking silicon nitride is applied, then the drains and sources of the transistor and silicon oxide masking them are formed, then the silicon nitride layer and the shielding layer of silicon oxide are removed and gate silicon oxide and the polysilicon gate are formed, while the width of the polysilicon gate is the gate should be greater than the width of the masking silicon nitride by the value of the accuracy of alignment of the layer of masking silicon nitride and the polysilicon gate.

EFFECT: increasing the radiation resistance of MOS structures when exposed to gamma radiation.

1 cl, 6 dwg