FIELD: semiconductor devices production.
SUBSTANCE: scope of the proposed invention is the production of semiconductor devices and integrated circuits, namely the production of radiation-resistant MOS structures. The effect is achieved by the fact that, in contrast to the method for creating MOS structures, including the formation of gate silicon oxide and a polysilicon gate on a substrate of the first type of conductivity, a drain and source of a second type of conductivity, and silicon oxide masking them, in the proposed method, a shielding oxide layer is additionally formed silicon in places of formation of polysilicon gates, on which a layer of masking silicon nitride is applied, then the drains and sources of the transistor and silicon oxide masking them are formed, then the silicon nitride layer and the shielding layer of silicon oxide are removed and gate silicon oxide and the polysilicon gate are formed, while the width of the polysilicon gate is the gate should be greater than the width of the masking silicon nitride by the value of the accuracy of alignment of the layer of masking silicon nitride and the polysilicon gate.
EFFECT: increasing the radiation resistance of MOS structures when exposed to gamma radiation.
1 cl, 6 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR PRODUCING CMOS TRANSISTOR GATE REGIONS | 2003 |
|
RU2297692C2 |
METHOD OF CMOS TRANSISTORS MANUFACTURING WITH RAISED ELECTRODES | 2006 |
|
RU2329566C1 |
METHOD FOR PRODUCTION OF MOSFETS FOR INTEGRAL CIRCUITS | 1986 |
|
SU1421186A1 |
METHOD OF MANUFACTURING CMOS STRUCTURES | 2015 |
|
RU2665584C2 |
MOS TRANSISTOR MANUFACTURING PROCESS | 0 |
|
SU1824656A1 |
BIPOLAR CMOS DEVICE AND ITS MANUFACTURING PROCESS | 2003 |
|
RU2282268C2 |
METHOD FOR PRODUCING CONGRUENT BIPOLAR CMOS DEVICE | 2005 |
|
RU2295800C1 |
METHOD OF MAKING SELF-ALIGNED TRANSISTOR STRUCTURES | 2008 |
|
RU2377691C1 |
METHOD FOR MANUFACTURING SILICON-ON-SAPPHIRE MIS TRANSISTOR | 2004 |
|
RU2298856C2 |
METHOD FOR MANUFACTURING INTEGRATED CIRCUITS AROUND CMOS TRANSISTORS | 2000 |
|
RU2185686C2 |
Authors
Dates
2023-01-31—Published
2022-06-01—Filed