NON-POLAR III-NITRIDE MATERIAL, METHOD FOR ITS PRODUCTION, CONTAINING IT ELECTRONIC DEVICE AND MULTILAYER MATERIAL Russian patent published in 2025 - IPC C30B25/04 C30B25/18 C30B29/38 C30B29/40 

FIELD: performing operations.

SUBSTANCE: invention can be used in making plates of templates or pseudo-substrates for electro-optical devices, for example, light-emitting diodes, laser diodes or solar cells, as well as for powerful or high-frequency electronic devices, such as field or bipolar transistors. First, a structured mask is formed on a template plate of non-polar III-nitride, which is a monocrystal oriented in the m- or a-plane with formula X_xZ_1-xN, where X and Z are independently selected from Ga, In or Al, 0≤x≤1. As a result of etching this plate, nanopillars are obtained, which are located uniformly along the c-direction and the direction orthogonal to it, which form an ordered array. Nanopillars have height of 100-1000 nm and a round cross-section with a cross-sectional size of 20-2000 nm. Pitch between centres of nanopillars is 50-2000 nm, wherein the pitch between two adjacent nanopillars in the c-direction exceeds the pitch between two neighbouring nanopillars in the direction orthogonal to it. On the formed massif of nanopillars the first III-nitride is grown, the material of which is identical to the material of the specified massif, so that an ordered massif of nanocrystals is obtained, on which the second III-nitride is grown, the material of which differs from the material of the first III-nitride. Non-polar III-nitride material obtained using this method contains nanocrystals and a layer of a second non-polar III-nitride, in which these nanocrystals are at least partially included, and can be included in the multilayer material as a buffer layer arranged in two III-nitride layers of different composition.

EFFECT: invention enables to obtain dense films from non-polar III-nitrides without mechanical stress on a foreign substrate and to control parameters of ordered arrays of nanopillars, which provides low density of such defects as threading dislocations.

18 cl, 7 dwg, 2 ex