FIELD: electricity.
SUBSTANCE: invention relates to semiconductor converters for autonomous power sources and can be effectively used for joint operation with low-power beta-radiation sources. For autonomous beta-volt power supply there proposed is design of semiconductor converter of capacitor type with function of multiplication of electron flow, operation of which is based on secondary emission of electrons, and base material is diamond.
EFFECT: technical result is possibility to significantly reduce leakage current with simultaneous increase of charging current and value of generated voltage at same power of beta-voltaic radiation source, at the same time it is possible to satisfy requirements for radiation resistance (which are not met by devices on silicon) in semiconductor converters on pin structures operating in gate mode.
1 cl, 1 dwg
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