METHOD OF FORMING SEMICONDUCTOR STRUCTURES FOR CONVERTING THE RADIO-CHEMICAL DECAY OF C-14 INTO ELECTRIC ENERGY Russian patent published in 2020 - IPC H01L21/205 C23C16/32 

FIELD: electrical engineering.

SUBSTANCE: invention relates to microelectronic technology and specifically to a method of forming semiconductor structures for converting the energy of radiochemical decomposition of S-14 into direct current. Technical solution includes CVD-process, in which silicon carbide film formation is carried out with participation of atoms of crystal lattice of silicon substrate and carbon atoms, for this purpose conditions are created for chemical hydrogen transfer of carbon through the stage of formation of hydrocarbons in container-reactor with temperature of 1,000–1,200 °C zone and subsequent decomposition thereof on the surface of silicon substrates in the high temperature zone 1,360–1,380 °C in the direction of hydrogen flow rate of 0.3–0.5 l/min, in growth of silicon carbide phase on silicon substrate in front of it is a grid of dislocations of disparity of lattice parameters, subsequent thermal annealing of the heterostructure is carried out in a vacuum at temperature from 1,000 to 1,100 °C for 60 to 30 minutes respectively, which provides a localization effect or gettering grip of super stoichiometric and dissolved atomic C-14 on a grid of dislocations in the silicon phase, physical interaction of high-energy beta-electrons with the silicon phase generates additional secondary electrons, which leads to gradient diffusion electron flow in the silicon phase, sacrificial silicon carbide layer has performed its role and is removed partially or completely to form contact sites for silicon, and in other versions and silicon carbide, wherein silicon carbide film can be isotypic with silicon substrate of both p- and n-type conductivity, oxidized on nonworking side.

EFFECT: method simplifies the technology of forming an energy converter structure while preserving the radioisotope use efficiency in minimum amount.

3 cl, 1 dwg