METHOD OF PRODUCING ARRAYS OF REGULAR SUBMICRON HOLES IN THIN METAL FILMS ON SUBSTRATES Russian patent published in 2019 - IPC H01L21/3065 G03F7/36 C23F1/04 B82Y30/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to micro- and nanotechnologies and can be used for production of ordered array of submicron holes in thin metal films intended for creation of microelectronics, photonics, nanoplasma-screening devices, as well as quantum computing devices. Method involves preparation of substrate working surface, application of thin metal film on substrate working surface, application of resistive layer on thin metal film, beam lithography with formation of mask in resistive layer and etching in plasma of thin metal film through mask in resistive layer. Etching of thin metal film is carried out in two stages, and at first stage of etching, at pressure P1 and with accelerating voltage U1, depth of etching A is 60–90 % of thickness of thin metal film, and at second stage of etching, at pressure P2 and s accelerating voltage U2, depth of etching B is 40–10 % of thickness of thin metal film, wherein U2 lies in range from 1.5*U1 to 5*U1, and P2 lies in range from P1 to 4*P1.

EFFECT: technical result of the invention consists in reduction of the introduced defectiveness on the surface of the thin metal film as a result of reprecipitation of non-volatile compounds formed during the etching process of thin metal films, and obtaining value of 90±2° inclination angle of profile of submicron holes in the array.

9 cl, 9 dwg, 1 ex