GALLIUM ARSENIDE DIFFERENTIAL VOLTAGE-CURRENT CONVERTER Russian patent published in 2023 - IPC H03F3/34 

FIELD: radio engineering.

SUBSTANCE: invention relates to the field of radio engineering and communication and can be used as an analogue signal amplification and conversion element in the structure of gallium arsenide microcircuits for various functional purposes. Gallium arsenide differential voltage-current converter comprises a first input (1) and a second input (2), as well as a first (3) and a second (4) current outputs; a first (5) and a second (6) input field-effect transistors, the joint sources whereof are linked with the first (7) bus of the power supply unit via the first (8) reference current source; a first (9) and a second (10) auxiliary resistors, wherein the first (3) and the second (4) current outputs are matched with the second (11) bus of the power supply unit, the gate of the first (5) input field-effect transistor is linked with the first (1) input of the apparatus, and the gate of the second (6) input field-effect transistor is linked with the second (2) input of the apparatus. The drain of the first (5) input field-effect transistor is linked with the gate of the first (12) additional field-effect transistor and is linked with the source of the first (12) additional field-effect transistor and the gate of the second (13) additional field-effect transistor via the first (9) auxiliary resistor; the drain of the second (13) additional field-effect transistor is linked with the first (3) current output of the apparatus; the source of the second (13) additional field-effect transistor is connected to the drain of the first (12) additional field-effect transistor; the drain of the second (6) input field-effect transistor is linked with the gate of the third (14) additional field-effect transistor and is linked with the source of the third (14) additional field-effect transistor and the gate of the fourth (15) additional field-effect transistor via the second (10) auxiliary resistor; the drain of the fourth (15) additional field-effect transistor is connected to the second (4) current output of the apparatus, and the source thereof is linked with the drain of the third (14) additional field-effect transistor; the first (8) reference current source is made in the form of an input-controlled (16) inverting reference current source; the sources of the second (13) and the fourth (15) additional field-effect transistors are linked with the emitter of the additional bipolar transistor (17) with the base connected to a bias voltage source (18) and the collector linked with the control input (16) of the reference current source (8).

EFFECT: increase in the gain slope of the differential converter without a significant increase in the total static current consumption of GaAs transistors.

3 cl, 8 dwg