METHOD OF MANUFACTURING SINGLE-ELECTRON MONATOMIC TRANSISTORS WITH A TRANSISTOR OPEN CHANNEL AND A TRANSISTOR MANUFACTURED IN THIS WAY Russian patent published in 2019 - IPC H01L21/336 H01L29/78 B82Y10/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to nanotechnology, particularly, to manufacturing of single-electron transistors with island in form of single atoms in crystal lattice. Claimed task is solved by the fact that the method of making a single-electron monatomic transistor with an open channel, according to the technical solution, involves successive: deposition of a layer of positive electronic resistor (ERP) on a silicon plate on an insulator (SOI); formation of a pattern of tunnel electrodes of developing an exposed pattern in a developer; sputtering of film resistant to alkali etching of metal on plate with pattern of tunnel electrodes with subsequent removal of remaining resist and metal film on it in solvent, applying ERP film to obtained plate with tunnel electrodes and forming mask pattern; sputtering of masking material film soluble in alkaline solution; removing silicon top surface of SOI plate; applying a resist layer on the obtained plate with tunnel electrodes, followed by forming a slit in the obtained resist layer; deposition of a layer of resistant metal in the formed slot with formation of control electrodes; dissolving of masking material with residues of proof metal on it in alkaline etching agent. Technical result is achieved by using the same sacrificial layer (aluminium layer) both at the stage of crystalline channel etching and during sputtering of control electrodes.

EFFECT: technical result achieved when using the claimed invention is to ensure high (~5 nm) of positioning accuracy of layer with control electrodes relative to layer with tunnel electrodes.

12 cl, 15 dwg