METHOD FOR MANUFACTURING A LATERAL BIPOLAR TRANSISTOR WITH AN INSULATED GATE BASED ON A SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2023 - IPC H01L29/768 H01L21/328 B82Y40/00 

FIELD: microelectronics.

SUBSTANCE: production of transistors based on silicon-on-insulator (SOI) structures with a submicron thickness of the device layer. The transistor is manufactured on a SOI structure by forming a low-impurity base region, an emitter region along a T-shaped mask in a device layer 0.2 μm thick, so that the emitter has a perpendicular protrusion extending into the source region, and a collector, then forming a transistor source region and a high-impurity base region. Then the gate silicon oxide is formed, a polysilicon gate is created above the emitter region, with the exception of the region of the perpendicular protrusion of the emitter, and the transistor spacers are formed. Residual silicon oxide is removed over the mask to form contacts. The contact to the source and the part of the perpendicular protrusion of the emitter not covered by silicon oxide is made uniform.

EFFECT: expanding the range of products manufactured using the CMOS production process, namely the creation of discrete high-voltage bipolar transistors with an insulated gate with a breakdown voltage of more than 200 V.

1 cl, 4 dwg