FIELD: cleaning technology.
SUBSTANCE: invention can be used in water/air/products purification systems, chemical analysis systems, medicine, UV spectrometry, concealed noise-immune optical communication systems, etc. A source of spontaneous ultraviolet radiation with wavelength less than 250 nm includes substrate (1) from c-Al2O3, on which A1N buffer layer (2) is sequentially formed, active region (3) containing at least 200 pairs of layers in the form of lower barrier layer (5) of A1N with thickness (5.5–7.5) nm and layer (4) of quantum well of GaN with thickness of (0.26–0.78) nm, and upper barrier layer (5) of A1N with thickness of (5.5–7.5) nm.
EFFECT: source has high radiation efficiency, increased power value, and wherein elastic relaxation effect of elastic voltages is minimized.
1 cl, 6 dwg
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Authors
Dates
2019-12-23—Published
2018-12-25—Filed