GALLIUM ARSENIDE BUFFER AMPLIFIER ON FIELD-EFFECT AND BIPOLAR P-N-P TRANSISTORS Russian patent published in 2023 - IPC H03F3/343 

FIELD: electronics.

SUBSTANCE: invention relates to the field of analogue microelectronics and can be used as a gallium arsenide output stage of various analogue apparatus allowing operation under penetrating radiation, low and high temperatures. Gallium arsenide buffer amplifier on field and bipolar p-n-p transistors comprises the input (1) and output (2) of the apparatus; an input field-effect transistor (3) with the gate linked with the input (1) of the apparatus, the source connected to the output (2) of the apparatus, and the drain matched with the first (4) bus of the power supply unit; the output of the apparatus (2) is linked with the drain of the output field-effect transistor (5) with the gate linked with the second (6) bus of the power supply unit via a reference current source (7); a reference voltage source (8) is connected between the source of the output field-effect transistor (5) and the second (6) bus of the power supply unit, as well as an auxiliary field-effect transistor (9) with the drain linked with the first (4) bus of the power supply unit and an auxiliary p-n junction (10). The gate of the auxiliary field-effect transistor (9) is linked with the drain of the input field-effect transistor (3), the source of the auxiliary field-effect transistor (9) is connected to the drain of the input field-effect transistor (3) via an additional resistor (11) and linked with the emitter of the additional bipolar transistor (12), the base of the additional bipolar transistor (12) is linked with the bias voltage source (13), the collector of the additional bipolar transistor (12) is linked with the gate of the output field-effect transistor (5), and an auxiliary p-n junction (10) is connected between the bias voltage source (13) and the drain of the input field-effect transistor (3).

EFFECT: creation of a buffer amplifier implemented on gallium arsenide field-effect transistors JFET with a control p-n junction and bipolar GaAs p-n-p transistors.

3 cl, 6 dwg