LASER PLASMA ANTENNA Russian patent published in 2021 - IPC H01Q1/38 H01Q15/06 

Abstract RU 2742380 C1

FIELD: physics.

SUBSTANCE: invention relates to the field of antenna equipment and can be used for transmission and reception of electromagnetic signals in a wide range of wavelengths. Technical result is achieved due to the fact that in the laser plasma antenna instead of the gas-discharge plasma a semiconductor plasma is used, which is formed in the special waveguide semiconductor structure using a laser or light-emitting diode source, due to the power control of which the initially high resistance of the semiconductor structure can be reduced by several orders and vice versa, when the light source is switched off, it will pass into the weakly conducting state (kOhm and higher), and by connecting the light source to the waveguide structures through the optical distribution device, switching between waveguide semiconductor antennas with different configurations can be performed.

EFFECT: technical result is improvement of parameters of electromagnetic compatibility, simplification of design and addition of new functional capabilities.

1 cl, 2 dwg

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RU 2 742 380 C1

Authors

Mironov Yurij Borisovich

Kazantsev Sergej Yurevich

Titovets Pavel Aleksandrovich

Dates

2021-02-05Published

2020-04-03Filed