MAGNETOELECTRIC DIODE WITH INTERNAL MAGNETIC FIELD Russian patent published in 2021 - IPC H01L43/08 H01L43/10 

FIELD: radio electronics.

SUBSTANCE: invention relates to the field of radio electronics and can be used in the development of devices such as highly sensitive sensors of magnetic field, electric current, electromagnetic field, converters, renewable energy sources and other devices, as well as in the construction of automation devices, medical equipment, automotive electronics, navigation, geology, security systems, etc. A magnetoelectric diode with an internal magnetic field is a horizontal p-i-n-diode made of a piezosemiconductor material, the high-resistance region of which is a composite magnetostrictive-piezosemiconductor structure with a magnetization gradient formed by a high-resistance region of the GaAs substrate and a magnetostrictive layer consisting of from metglass and nickel.

EFFECT: magnetoelectric diode with an internal magnetic field has a compact structure, high sensitivity to the magnetic field, and low resonance frequency.

1 cl, 1 dwg