FIELD: physics.
SUBSTANCE: application describes a method for passivating a through hole in a semiconductor wafer, which includes at least the following steps: providing a semiconductor wafer comprising multiple stacks of solar cells with an upper side and a lower side, each solar cell stack including a germanium substrate forming the lower side of the semiconductor wafer, a germanium partial element and at least two III-V-partial elements in the specified sequence, as well as at least one through hole extending from the upper side to the lower side of the semiconductor wafer with a solid side wall and an oval cross-section, and applying a dielectric insulating layer on the upper side wafer, the bottom side of the semiconductor wafer, and the side wall of the through hole by chemical vapor deposition.
EFFECT: invention makes passivating a through hole of a semiconductor plate more effective.
9 cl, 3 dwg
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