FIELD: materials science.
SUBSTANCE: invention relates to materials science and can be used in the manufacture of semiconductor devices. The composition of the mesa-etchant for indium antimonide orientation (100) includes hydrofluoric acid, hydrogen peroxide and water with the following ratio of components (volume fractions): 2 parts of 46% hydrofluoric acid, high purity, 2 parts of 30% hydrogen peroxide, high purity, and 450 parts of deionized water.
EFFECT: invention makes it possible to form a mesa structure with a slope of the side walls of the elements 45-50° in the orthogonal crystallographic directions [110] and [1-10], without forming a "reverse angle", uniformity of etching over the plate area and high reproducibility of the process.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| COMPOSITION OF MESA-ETCHING AGENT FOR INDIUM ANTIMONID ORIENTATION (100) | 2019 |
|
RU2699347C1 |
| METHOD OF MAKING PHOTODIODE ARRAY | 2024 |
|
RU2840363C1 |
| ETCHANT COMPOSITION FOR OPENING WINDOWS IN HYBRID DIELECTRIC COATING | 2023 |
|
RU2811378C1 |
| METHOD FOR MANUFACTURING A MATRIX PHOTODETECTOR | 2022 |
|
RU2792707C1 |
| METHOD OF TREATING SURFACE OF PLATES OF INDIUM ANTIMONIDE (100) | 2023 |
|
RU2818690C1 |
| METHOD OF THINNING PHOTOSENSITIVE LAYER OF MATRIX PHOTODETECTOR | 2022 |
|
RU2840324C2 |
| METHOD FOR FORMING A HYBRID DIELECTRIC COATING ON THE SURFACE OF INDIUM ANTIMONIDE ORIENTATION (100) | 2022 |
|
RU2782989C1 |
| METHOD FOR EVALUATING THE CRYSTAL STRUCTURE OF NEAR-SURFACE LAYERS OF INDIUM ANTIMONIDE (100) | 2020 |
|
RU2754198C1 |
| ETCHING AGENT FOR PRECISION CHEMICAL POLISHING OF GALLIUM ANTIMONIDE MONOCRYSTALS AND GALLIUM ANTIMONIDE-BASE SOLID SOLUTIONS | 0 |
|
SU1135382A1 |
| METHOD FOR INDIUM ANTIMONIDE POLISHING SOLUTION PREPARING | 0 |
|
SU1669337A1 |
