FIELD: materials science.
SUBSTANCE: invention relates to materials science and can be used in the manufacture of semiconductor devices. The composition of the mesa-etchant for indium antimonide orientation (100) includes hydrofluoric acid, hydrogen peroxide and water with the following ratio of components (volume fractions): 2 parts of 46% hydrofluoric acid, high purity, 2 parts of 30% hydrogen peroxide, high purity, and 450 parts of deionized water.
EFFECT: invention makes it possible to form a mesa structure with a slope of the side walls of the elements 45-50° in the orthogonal crystallographic directions [110] and [1-10], without forming a "reverse angle", uniformity of etching over the plate area and high reproducibility of the process.
1 cl, 3 dwg
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