FIELD: semiconductors.
SUBSTANCE: present invention relates to the technology of manufacturing semiconductor devices sensitive to infrared radiation, in particular single- and multi-element photodiodes made of indium antimonide (InSb). Opening the windows in the hybrid dielectric coating is carried out in several stages: first, PCT is carried out in the CF4/O2 plasma of the SiOx layer, then chemical etching of the anodic oxide layer is carried out with an etchant of the following composition: ammonium fluoride, hydrofluoric acid and water in the following ratio of components (volume fractions): 27:1:1800.
EFFECT: developing an etchant composition for opening windows in a hybrid dielectric coating of SiOx/indium antimonide anodic oxide without etching the dielectric layer, which forms the inhomogeneity and unevenness of the formed window.
1 cl, 3 dwg
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