COMPOSITION OF MESA-ETCHING AGENT FOR INDIUM ANTIMONID ORIENTATION (100) Russian patent published in 2019 - IPC H01L21/306 H01L21/3105 

FIELD: materials science.

SUBSTANCE: invention relates to material science, particularly to treating surface of indium antimonide (InSb) orientation (100) with etching agent to create mesastructure, and can be used in making semiconductor devices. Invention makes it possible to provide formation of mesastructure with inclination of side walls of elements less than 90° in orthogonal crystallographic directions [110] and [1-10], direction of cleavage, which is necessary for qualitative passivation with dielectric coating, smooth surface of bottom of mesa, area between elements, homogeneity of etching over the area of the plate and high reproducibility of the process. Imine composition for indium antimonide of orientation (100) includes citric acid, hydrogen peroxide and additionally contains phosphoric acid, with the following ratio of components, volume fractions: 1.85 parts 85 % phosphoric acid, 1 part 30 % hydrogen peroxide, 4.5 parts 30 % citric acid. Profile obtained during etching is identical in crystallographic directions [110] and [1-10] with inclination of side walls less than 90°, which is a necessary condition for subsequent qualitative passivation.

EFFECT: etchant ensures uniform etching over the area of the plate and high reproducibility of the process.

1 cl, 5 dwg