METHOD FOR MANUFACTURING LIGHT-EMISSIONING DIODE BASED ON AlGaAs/GaAs HETEROSTRUCTURE Russian patent published in 2023 - IPC H01L33/30 

FIELD: electronic engineering.

SUBSTANCE: invention relates to electronic engineering, in particular to a method for manufacturing light-emitting diodes, and can be used in the electronics industry for converting electrical energy into light. A method for manufacturing a light-emitting diode based on an AlGaAs/GaAs heterostructure includes forming heterostructure layers on a GaAs substrate, applying the first ohmic contact, applying a transparent coating, applying a metal reflector layer, forming a GaAs carrier substrate with rear and front ohmic contacts, mounting the carrier substrate and heterostructure AlGaAs/GaAs by forming an AuIn₂compound, removing the GaAs substrate and forming a second ohmic contact.

EFFECT: invention makes it possible to manufacture a light-emitting diode based on an AlGaAs/GaAs heterostructure with an increased efficiency of converting electricity into radiation by reducing the degree of degradation of the heterostructure.

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