METHOD FOR MANUFACTURING SURFACE ION TRAP Russian patent published in 2023 - IPC H01J49/42 G06N10/40 H01L29/12 

FIELD: quantum computing.

SUBSTANCE: method for manufacturing multilayer surface ion traps and monolithic integrated photonic circuits based on them for quantum computing. Before the first dielectric layer is deposited on the substrate, a GaN buffer layer is grown by epitaxy, then an AlGaN barrier layer is grown on the GaN buffer layer by epitaxy, thereby forming a two-dimensional electron gas at the GaN/AlGaN hetero-interface. On the barrier layer, ohmic contacts to the region of two-dimensional electron gas are made, and in the first layer of the insulating dielectric, windows are opened to ohmic contacts to the region of two-dimensional electron gas. Before applying the second layer of insulating dielectric, metallization of the first level is covered with a thin layer of adhesive and anti-reflective coating.

EFFECT: expansion of the frequency range of control electromagnetic radiation transmitted through the electrically conductive layers of the ion trap to the UV part of the spectrum, providing the possibility of monolithic production on a single crystal of integrated photonic circuits for electromagnetic waves in the UV range and the ion trap.

1 cl, 5 dwg